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| SI1050X Vishay Siliconix N-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.086 at VGS = 4.5 V 8 0.093 at VGS = 2.5 V 0.102 at VGS = 1.8 V 0.120 at VGS = 1.5 V ID (A) 1.34a 1.29 7.1 1.23 0.7 Qg (Typ.) FEATURES * Halogen-free Option Available * TrenchFET(R) Power MOSFET * 100 % Rg Tested RoHS COMPLIANT APPLICATIONS * Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D Marking Code D 2 D Q XX YY Lot Traceability and Date Code 5 G 3 4 S Part # Code Top View Ordering Information: SI1050X-T1-E3 (Lead (Pb)-free) SI1050X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C TA = 25 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 8 5 1.34b, c 1.07b, c 6 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 C/W. t5s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit C/W Document Number: 73896 S-80641-Rev. B, 24-Mar-08 www.vishay.com 1 SI1050X Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 5 V VDS = 8 V, VGS = 0 V VDS = 8 V, VGS = 0 V, TJ = 85 C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.34 A VGS = 2.5 V, ID = 1.29 A VGS = 1.8 V, ID = 1.23 A VGS = 1.5 V, ID = 0.76 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time ISM VSD trr Qrr ta tb IF = 1.0 A, di/dt = 100 A/s IS = 1.0 A 0.8 18.5 3.7 6.7 11.8 6 1.2 28 5.7 ns A V nC gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 4 V, RL = 3.6 ID 1.1 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 4 V, VGS = 5 V, ID = 1.34 A VDS = 4 V, VGS = 4.5 V, ID = 1.34 A VDS = 4 V, VGS = 0 V, f = 1 MHz VDS = 4 V, ID = 1.34 A 6 0.071 0.078 0.085 0.092 4.12 585 190 130 7.7 7.1 1.14 1.69 3.5 6.8 35 25 6 4.6 10.2 53 37.5 9 ns 11.6 10.7 nC pF 0.086 0.093 0.102 0.120 S 0.35 8 18.2 - 2.55 0.9 100 1 10 V mV/C V nA nA A A Symbol Test Conditions Min. Typ. Max. Unit Drain-Source On-State Resistancea RDS(on) Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73896 S-80641-Rev. B, 24-Mar-08 SI1050X Vishay Siliconix TYPICAL CHARACTERISTICS 6 VGS = 5 thru 2 V 5 I D - Drain Current (A) I D - Drain Current (A) VGS = 1.5 V 2.5 TA = 25 C, unless otherwise noted 3.0 4 2.0 TC = 125 C 1.5 3 2 1.0 TC = 25 C TC = - 55 C 1 VGS = 1.0 V 0 0.0 0.5 0.6 1.2 1.8 2.4 0.0 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.15 1000 Transfer Characteristics curves vs. Temp. R DS(on) - On-Resistance () 800 VGS = 1.8 V VGS = 1.5 V 0.09 VGS = 2.5 V C - Capacitance (pF) 0.12 Ciss 600 400 Coss 200 Crss VGS = 4.5 V 0.06 0.03 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 7 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 ID = 1.34 A VGS - Gate-to-Source Voltage (V) 4 R DS(on) - On-Resistance VDS = 4 V 3 VGS = 6.4 V 2 1.4 1.6 Capacitance (Normalized) 1.2 VGS = 4.5 V, ID = 1.34 A VGS = 1.5 V, ID = 0.76 A 1.0 VGS = 2.5 V, ID = 1.30 A VGS = 1.8 V, ID = 1.23 A 1 0.8 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Qg - Gate Charge On-Resistance vs. Junction Temperature Document Number: 73896 S-80641-Rev. B, 24-Mar-08 www.vishay.com 3 SI1050X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 10 0.16 ID = 1.34 A R DS(on) - On-Resistance () I S - Source Current (A) 1 TJ = 150 C 0.1 TJ = 25 C 0.12 TA = 125 C 0.08 TA = 25 C 0.04 0.01 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.9 0.8 4.0 VGS(th) Variance (V) 0.7 ID = 250 A Power (W) 0.6 0.5 0.4 0.3 0.2 - 50 1.0 3.0 5.0 RDS(on) vs VGS vs Temperature 2.0 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 10 1 ms Limited by RDS(on)* 10 ms 1 I D - Drain Current (A) 100 ms 1s 0.1 10 s DC 0.01 TA = 25 C Single Pulse 0.001 0.1 * VGS Single Pulse Power BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73896 S-80641-Rev. B, 24-Mar-08 SI1050X Vishay Siliconix TYPICAL CHARACTERISTICS 1 Duty Cycle = 0.5 0.2 Normalized Effective Transient Thermal Impedance 0.1 0.1 0.05 0.02 Notes: TA = 25 C, unless otherwise noted 0.01 PDM t1 0.001 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 C/W Single Pulse 0.0001 10-4 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 10 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73896. Document Number: 73896 S-80641-Rev. B, 24-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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